Layer

Thickness/nm

Material

Description

Doping

6

1300

n-GaAs

top connect layer

1 × 10^18

5

45

Al_0.18Ga_0.82As

Barrier

Undoped

4

6

n-GaAs

20 period

0.7 × 10^18

3

45

Al_0.18Ga_0.82As

20 period

Undoped

2

1200

n-GaAs

Bottom connect layer

1 × 10^18

1

300

Al_0.55Ga_0.45As

Etch stop layer

1 × 10^18

0

500 μm

GaAs

Substrate

Undoped